Paper |
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THPOTK015 |
Solid-State Pulsed Power Supply for a 100 keV Electron Source of the New Synchrotron Facility in Thailand |
electron, gun, power-supply, simulation |
2803 |
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- W. Phacheerak, S. Bootiew, T. Chanwattana, Ch. Dhammatong, N. Juntong, K. Kittimanapun
SLRI, Nakhon Ratchasima, Thailand
- K. Manasatitpong
Synchrotron Light Research Institute (SLRI), Muang District, Thailand
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The new synchrotron light source project in Thailand will utilize a thermionic DC electron gun. The maximum operation of the gun is 100 keV, which requires a pulsed power supply of 100kV. The present synchrotron machine uses a conventional design of the gun power supply. To improve the high voltage pulsed quality, the solid-state design of the gun power supply is utilized. The output pulse width can be adjusted easily and the droop is less compared to the conventional design. The designed output of 100 kV amplitude with 5 µs pulsed width can be achieved with this design. It also produces a less droop of 1.8%. The design process and results will be presented.
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DOI • |
reference for this paper
※ https://doi.org/10.18429/JACoW-IPAC2022-THPOTK015
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About • |
Received ※ 08 June 2022 — Revised ※ 13 June 2022 — Accepted ※ 16 June 2022 — Issue date ※ 26 June 2022 |
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THPOTK044 |
Ultra-Fast Generator for Impact Ionization Triggering |
pulsed-power, cathode, plasma, electronics |
2872 |
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- A.A. del Barrio Montañés, Y. Dutheil, T. Kramer, V. Senaj
CERN, Meyrin, Switzerland
- M. Sack
KIT, Karlsruhe, Germany
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Impact ionization triggering can be successfully applied to standard thyristors, thus boosting their dI/dt capability by up to 1000x. This groundbreaking triggering requires applying significant overvoltage on the anode-cathode of thyristor with a slew rate > 1kV/ns. Compact pulse generators based on commercial off-the-shelf (COTS) components would allow the spread of this technology into numerous applications, including fast kicker generators for particle accelerators. In our approach, the beginning of the triggering chain is a HV SiC MOS with an ultra-fast super-boosting gate driver. The super boosting of a 1.7kV rated SiC MOS allows to reduce the MOS rise time by a factor of > 25 (datasheet tr = §I{20}{ns} vs. measured tr < 800ps, resulting in an output voltage slew rate > 1kV/ns and an amplitude > 1kV. Additional boosting is obtained by a Marx generator with GaAs diodes, reaching an output voltage slew rate > 11kV/ns. The final stage will be a Marx generator with medium size thyristors triggered in impact ionization mode with sufficient voltage and current rating necessary for the triggering of a big thyristor. This paper presents the impact ionization triggering of a small size thyristor.
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DOI • |
reference for this paper
※ https://doi.org/10.18429/JACoW-IPAC2022-THPOTK044
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|
About • |
Received ※ 16 May 2022 — Revised ※ 13 June 2022 — Accepted ※ 14 June 2022 — Issue date ※ 06 July 2022 |
Cite • |
reference for this paper using
※ BibTeX,
※ LaTeX,
※ Text/Word,
※ RIS,
※ EndNote (xml)
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