Paper |
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THPOMS037 |
Ripple Pattern Formation on Silicon Carbide Surfaces by Low-Energy Ion-Beam Erosion |
3045 |
SUSPMF130 |
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- D. Gupta, S. Aggarwal
Kurukshetra University, Kurukshetra, India
- R. Singhal
Malviya Institute of Technology, Jaipur, India
- G.R. Umapathy
IUAC, New Delhi, India
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A versatile air insulated high current medium energy 200 kV Ion Accelerator has been running successfully at Ion Beam Centre, Kurukshetra University, India for carrying out multifarious experiments in material science and surface physics. Ion beam induced structures on the surfaces of semiconductors have potential applications in photonics, magnetic devices, photovoltaics, and surface-wetting tailoring etc. In this regard, silicon carbide (SiC) is a fascinating wide-band gap semiconductor for high-temperature, high-power and high-frequency applications. In the present work, fabrication of self-organized ripple patterns is carried out on the SiC surfaces using 80 keV Ar+ ions for different fluences at oblique incidence of 500. Studies demonstrate that ripple wavelength and amplitude, ordering and homogeneity of these patterns vary linearly with argon ion fluence. The ripples tend to align themselves parallel to the projection of the ion beam direction. The evolution of such surface structures is explained with the help of existing formalisms of coupling between surface topography and preferential sputtering.
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DOI • |
reference for this paper
※ https://doi.org/10.18429/JACoW-IPAC2022-THPOMS037
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About • |
Received ※ 20 May 2022 — Revised ※ 13 June 2022 — Accepted ※ 16 June 2022 — Issue date ※ 18 June 2022 |
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