JACoW is a publisher in Geneva, Switzerland that publishes the proceedings of accelerator conferences held around the world by an international collaboration of editors.
@inproceedings{gupta:ipac2022-thpoms037,
author = {D. Gupta and S. Aggarwal and R. Singhal and G.R. Umapathy},
title = {{Ripple Pattern Formation on Silicon Carbide Surfaces by Low-Energy Ion-Beam Erosion}},
booktitle = {Proc. IPAC'22},
% booktitle = {Proc. 13th International Particle Accelerator Conference (IPAC'22)},
pages = {3045--3048},
eid = {THPOMS037},
language = {english},
keywords = {radiation, experiment, HOM, cathode, ion-source},
venue = {Bangkok, Thailand},
series = {International Particle Accelerator Conference},
number = {13},
publisher = {JACoW Publishing, Geneva, Switzerland},
month = {07},
year = {2022},
issn = {2673-5490},
isbn = {978-3-95450-227-1},
doi = {10.18429/JACoW-IPAC2022-THPOMS037},
url = {https://jacow.org/ipac2022/papers/thpoms037.pdf},
abstract = {{A versatile air insulated high current medium energy 200 kV Ion Accelerator has been running successfully at Ion Beam Centre, Kurukshetra University, India for carrying out multifarious experiments in material science and surface physics. Ion beam induced structures on the surfaces of semiconductors have potential applications in photonics, magnetic devices, photovoltaics, and surface-wetting tailoring etc. In this regard, silicon carbide (SiC) is a fascinating wide-band gap semiconductor for high-temperature, high-power and high-frequency applications. In the present work, fabrication of self-organized ripple patterns is carried out on the SiC surfaces using 80 keV Ar+ ions for different fluences at oblique incidence of 500. Studies demonstrate that ripple wavelength and amplitude, ordering and homogeneity of these patterns vary linearly with argon ion fluence. The ripples tend to align themselves parallel to the projection of the ion beam direction. The evolution of such surface structures is explained with the help of existing formalisms of coupling between surface topography and preferential sputtering.}},
}