Author: Jena, D.
Paper Title Page
MOPOTK027 Characterization of Various GaN Samples for Photoinjectors 500
 
  • M.B. Andorf, I.V. Bazarov, S.J. Levenson, J.M. Maxson
    Cornell University (CLASSE), Cornell Laboratory for Accelerator-Based Sciences and Education, Ithaca, New York, USA
  • J. Encomendero, D. Jena, V.V. Protasenko, H.G. Xing
    Cornell University, Ithaca, New York, USA
 
  Funding: DOE-HEP DESC0021002 DOE-NP DE-SC0021425
Photoemission properties (quantum efficiency, spectral response, and lifetime) of various GaN based photocathodes are summarized, including p-doped samples in its hexagonal phase, cubic GaN and a more exotic 2-D hole gas sample. The 2-D hole contains no dopant impurity but achieves high conductivity via polarization fields produced at the heterojunction of GaN and AlN. For efficient electron production, cesium is used to achieve Negative Electron Affinity.
 
DOI • reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2022-MOPOTK027  
About • Received ※ 08 June 2022 — Revised ※ 10 June 2022 — Accepted ※ 17 June 2022 — Issue date ※ 26 June 2022
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