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THPOTK044 |
Ultra-Fast Generator for Impact Ionization Triggering |
2872 |
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- A.A. del Barrio Montañés, Y. Dutheil, T. Kramer, V. Senaj
CERN, Meyrin, Switzerland
- M. Sack
KIT, Karlsruhe, Germany
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Impact ionization triggering can be successfully applied to standard thyristors, thus boosting their dI/dt capability by up to 1000x. This groundbreaking triggering requires applying significant overvoltage on the anode-cathode of thyristor with a slew rate > 1kV/ns. Compact pulse generators based on commercial off-the-shelf (COTS) components would allow the spread of this technology into numerous applications, including fast kicker generators for particle accelerators. In our approach, the beginning of the triggering chain is a HV SiC MOS with an ultra-fast super-boosting gate driver. The super boosting of a 1.7kV rated SiC MOS allows to reduce the MOS rise time by a factor of > 25 (datasheet tr = §I{20}{ns} vs. measured tr < 800ps, resulting in an output voltage slew rate > 1kV/ns and an amplitude > 1kV. Additional boosting is obtained by a Marx generator with GaAs diodes, reaching an output voltage slew rate > 11kV/ns. The final stage will be a Marx generator with medium size thyristors triggered in impact ionization mode with sufficient voltage and current rating necessary for the triggering of a big thyristor. This paper presents the impact ionization triggering of a small size thyristor.
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DOI • |
reference for this paper
※ https://doi.org/10.18429/JACoW-IPAC2022-THPOTK044
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About • |
Received ※ 16 May 2022 — Revised ※ 13 June 2022 — Accepted ※ 14 June 2022 — Issue date ※ 06 July 2022 |
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